Diener Plasma reactor (2,45 GHz).
Device description:
This device is designed for surface treatment of materials in plasma. It operates using low-temperature and low-pressure plasma generated at a frequency of 2.45 GHz. It enables cleaning, activation, chemical surface modification, and etching without damaging temperature-sensitive materials.
Features:
- – microwave generator 2,45 GHz
- – maximum power 300 W
- – reaction chamber volume 300 cm3
- – capability for two process gases max. flow rate 45 cm3/min
- – pressure: 0,01 – 1 mbar
Location:
Department of Physics and Materials Engineering (lab U15/404).
Responsible person:
Name: Aleš Mráček
Phone.: +420 576 035 102
Mobile: +420 733 690 668
Email: mracek@utb.cz
Office: U15/438